| Chang Fang,Yanqiang Cao,Di Wu,Aidong Li.[J].自然科学进展英文版,2018,28(6):667-675 |
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| Thermal atomic layer etching: Mechanism, materials and prospects |
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| DOI： |
| 中文关键词: |
| 英文关键词:Thermal atomic layer etching
Atomic layer deposition
Self-limiting
Reaction mechanism
Atomic-scale precision |
| 基金项目: |
| Author Name | Affiliation | | Chang Fang | National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation
Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China | | Yanqiang Cao | National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation
Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China | | Di Wu | National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation
Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China | | Aidong Li | National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation
Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China |
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| 中文摘要: |
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| 英文摘要: |
| In the semiconductors and related industries, the fabrication of nanostructures and nanopatterns has become
progressive demand for achieving near-atomic accuracy and selectivity in etching different materials, particularly
in ultra-thin gate dielectrics and ultra-thin channels used in field-effect transistors and other nanodevices
below 10 nm scale. Atomic layer etching (ALE) is a novel technique for removing thin layers of material using
sequential and self-limiting reactions. Different from most ALE processes using plasma-enhanced or other energetic
particles-enhanced surface reactions, thermal ALE realizes isotropic atomic-level etch control based on
sequential thermal-drive reaction steps that are self-terminating and self-saturating. Thermal ALE can be viewed
as the reverse of atomic layer deposition (ALD), both of which define the atomic layer removal and growth steps
required for advanced semiconductor fabrication. In this review, we focus on the concept and basic characteristics
of the thermal ALE in comparison with ALD. Several typical thermal ALE mechanisms including fluorination
and ligand-exchange, conversion-etch, oxidation and fluorination reactions are intensively introduced.
The pros and cons of thermal ALE, plasma ALE, and traditional plasma etching are compared. Some representative
materials and their typical thermal ALE processes are summarized. Finally, the outlook and challenges
of thermal ALE are addressed. |
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